ST NPN Transistor (TO-39 Case)

The 2N2219A from ST Microelectronics is a through hole NPN silicon planar epitaxial transistor in a jedec TO-39 metal case. This transistor designed as high speed switch and features low leakage currents, low saturation voltage and useful current gain over a wide range of collector currents. Typically suitable for high speed switching application.

• Collector to emitter voltage (Vce) is 40V
• Collector current (Ic) is 0.6A
• Power dissipation (Pd) is 3W
• Collector to emitter saturation voltage of 1V at 500mA collector current
• DC current gain (hFE) of 35 at 0.1mA collector current
• Operating junction temperature range from 175°C
• ST 2N2219A Datasheet